Ferroelectric-on-Si Super-High-Frequency Fin Bulk AcousticResonators with Hf0.5Zr0.5O2 Nano-Laminated Transducers

This paper reports, for the first time, on the ferroelectric-on-semiconductor fin bulk acoustic resonators (FoSFinBAR) with lithographically scaled frequencies up to 18 GHz and keff2.Q as high as 17. The FoS-FinBARs benefit from the giant electromechanical coupling of the ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2) nano-laminates created by atomic layering. The transducer is conformally deposited on Si fins with sub-1m widths enabling excitation of SHF bulk acoustic resonance modes with increasing keff2 at higher frequencies. FoS-FinBARs, created by a CMOS-compatible process, are presented with frequencies over 2-18 GHz, Qs exceeding 500, and keff2s as high as 4.7%.