Gallium Nitride on Silicon Carbide Technologies for sub-20GHz applications

In recent years, gallium nitride (GaN) has become a key technology for wireless infrastructures, contributing to the increase in energy efficiency and data rates of 5G and future 6G. The very stringent constraints of modern telecommunications, as well as the opening to new frequency bands – FR2 and FR3 - are pushing operators to transition from LDMOS towards GaN. United Monolithic Semiconductors (UMS) has been commercializing different GaN technologies on SiC substrates for the past decade. Our presentation will discuss the different technologies proposed by UMS for sub-20GHz wireless applications as well as present some example designs and products.