INDUSTRY KEYNOTE: Advances in InP HEMT Low Noise Amplifier Technology
Indium Phosphide HEMT is well known for its low noise capabilities, due to its beneficial material properties. Northrop Grumman’s Space division manufactures InP integrated circuits for space and commercial applications. This talk will provide a technology overview of InP HEMT technology, and newer variant with InAs composite channel. This talk will cover progress and status of InP HEMT technology at Northrop Grumman. Different technology nodes will be described, ranging from 0.1 µm InP HEMT to newer Indium Arsenide Composite Channel HEMTs (IACC) which have been used at operating frequencies to 1,000 GHz. Various applications and receiver topologies will be described, and performance benchmarks will be provided. The talk will conclude with anticipated figure technology directions.