From component modeling for circuit design to circuit modeling for system design

This presentation discusses innovative approaches in transistor and circuit modeling for 5G and 6G telecommunications. To reach a first-pass design success, the modeling process must adapt from transistor to system levels to predict and enhance RF performance. This presentation introduces a novel methodology for characterizing GaN HEMT technologies that involves measuring the current-voltage (I-V) characteristic in a non-50 ? environment to accurately model dynamic trapping states. The trapping state of charge is dynamically controlled using calibrated RF pre-pulses derived from preliminary large-signal measurements. Furthermore, using such transistor models, the presentation highlights a new Power Amplifier modeling flow at the circuit design stage, to capture PA behavior under various conditions (instantaneous input power, carrier frequency and load impedance variations), offering valuable insights for circuit performance optimisation, system design and integration.