GH10-10 Nonlinear Thermal Model Capability & 3W SatCom HPA

This paper presents a comprehensive study of the thermal behavior of a 0.1-µm GaN HEMTs technology. An accurate electro thermal model is developed as an intermediate interface between the HEMT device process and MMIC design. The proposed model accurately predicts device characteristics over a wide temperature range. The model is validated at both the transistor level and through MMIC high power amplifiers operating up to the V-band.