Sub-60fs RFSOI Switch Performances in Advanced 200mm 130/65nm Hybrid Technology

RF Front End Modules (FEMs) are currently achieved using a variety of technologies. However, integration has driven the wireless business to achieve appropriate cost and form factor, and CMOS Silicon-on-Insulator (SOI) was adopted about 10 years ago and is now the dominant technology for Radio Frequency Switches (RF SW) in RF FEMs for cell phones and Wi-Fi [1]. While RF SW performances integrated on RF SOI technologies have exceeded what was feasible using GaAs technologies, 6G systems require even more stringent performances and consequently RF SOI technologies must continue to be improved. In this paper, the optimization of an advanced 200 mm RF SOI technology, which achieves a record RON × COFF of 60 fs by introducing 65 nm gate length at the Front End of the Line (FEOL) to reduce the channel resistance, is proposed and discussed. Furthermore, an innovative air gap process option at the Back End of the Line (BEOL) is proposed to achieve parasitic capacitance reduction.