AlN crystal growth and related power devices- Status and further path in Germany

AlN emerged as an attractive future semiconductor for RF- and power transistors. The ultra-wide band gap and the high thermal conductivity makes it to stand out amongst the UWBG materials. At the same time, it concurs with the further maturing GaN technology. This contribution will discuss the status of AlN crystal growth and wafering as well as giving an insight into sophisticated inspections of the structural quality of crystals and wafers by laboratory means only. Additionally, the talk showcases a laboratory pilot line for AlN technology that was recently established in Germany and will provide resulting examples of AlN based devices.