The Role and Challenges of Ultra-Wide Bandgap Semiconductors in Next-Generation GaN-HEMTs

GaN-HEMTs are highly attractive microwave sources due to their superior output power and efficiency compared to other solid-state power amplifiers. Researchers are actively exploring methods to achieve further enhancements, and the use of ultra-wide bandgap semiconductors has recently attracted significant attention. This presentation will cover the advancements in high-power operation of GaN-HEMTs on AlN substrates and discuss the challenges associated with further improvements. Additionally, the recent developments and detailed analyses from DC to RF of N-polar GaN-HEMTs will be discussed.