AlN-based RF devices

Talk abstract: AlN possesses a number of promising properties for RF devices. After all, ceramic AlN has been widely used as MMIC substrate for decades for its high thermal conductivity (>170 W/mK even in the ceramic form) and low RF loss. Crystalline AlN presents a completely new platform with a thermal conductivity about 340 W/mK and many other design advantages informed by the successes in GaN, GaAs and InP platforms for RF. In this talk, I will discuss our pursuit on AlN-based RF devices in the past 15+ years.