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Materials and Device Engineering for High-Performance AlGaN RF Electronics
This presentation will discuss recent advances in high-performance ultra-wide bandgap AlGaN-based transistors. The large breakdown field of AlGaN makes it a promising material for future RF and mm-wave applications, but the large bandgap also brings unique material challenges including extreme field management, contact resistance, and thermal conductivity. We will discuss our recent approaches toward overcoming these challenges through innovations in epitaxial growth, heterostructure design, and scaling of gate and source-drain regions.