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Ga2O3 FETs for future power and harsh environment electronics
Gallium oxide (Ga2O3) has unique and attractive features represented by physical properties based on the bandgap energy of 4.5 eV and availability of large-size, high-quality wafers produced from melt-grown bulk single crystals, and thus Ga2O3 field-effect transistors (FETs) and diodes have been actively developed all over the world mainly for power switching and harsh environment electronics applications. In this talk, we will discuss our recent works on vertical power and lateral high-frequency Ga2O3 FET developments.