KEYNOTE: Cryoelectronics for Scalable Ion-Trap Quantum Control

This keynote presents a five-year effort to develop cryogenic, low-power, high-voltage ion-trap control electronics integrated directly at the 4 K stage, enabling a modular and scalable platform for next-generation trapped-ion quantum processors. The talk concludes with a roadmap toward full cryogenic electrode control, cryogenic SPAD-based readout integration, and architectural enhancements for long-duration DC hold and active feedback, illustrating how co-designed cryoelectronics and ion-trap architectures enable scalable, high-fidelity quantum computing using commercial CMOS platforms.