Demonstration of an F-Band Heterogeneously Integrated Multi-Chip Downconverter

In this work, a suite of 35 nm InP HEMT MMIC chiplets are heterogeneously integrated on a 75 µm SiC interposer. Performance of each integrated chiplet component is demonstrated at F-Band (90 – 140 GHz), including 50 ohm transmission lines, a 116 GHz band pass filter with 4 dB loss and 10% bandwidth, and an F-Band LNA with 20 dB gain and a 3.6 dB packaged noise figure. These components are integrated on a single SiC interposer with an InP HEMT second harmonic mixer to demonstrate an F-Band downconverter multi-chiplet module. This is the first reported heterogeneous integration of the 35 nm InP HEMT process on SiC interposer, as well as the first reported F-Band heterogeneously integrated downconverter.