Novel 3D Film Laminate Package for High Efficiency 7 GHz GaN Power Amplifier Module

The present paper proposes a novel packaging method for high-frequency power amplifiers such as GaN HEMTs. The aim of this method is to minimize the parasitic components effect of the interconnection elements between the die and matching network. These parasitic components have been shown to have a negative effect on the amplifier's performance. To address this issue, a film lamination technology was employed in the high-frequency power amplifier. The 2-stage Doherty power amplifier utilizing film lamination technology achieved PAE of 40.4% and a gain of 28.2 dB in the 7 GHz frequency band with modulated signal. The module developed in this study exhibited the highest efficiency and gain among previously reported GaN DPA designs in the 6–8 GHz band, to the best of our knowledge.