GaN Characterization Method Towards Linearizability Prediction
This work presents a characterization procedure for GaN technologies that can quantify the changes in a small-signal equivalent circuit element caused by thermal, trapping, or voltage swing, independently. Therefore, GaN technology linearizability can be predicted by setting educated boundary limits for these variations through DPD measurements. A good correlation between parameters of the characterization method and GaN linearizability is established, hence reducing both development costs and time to market. The method is demonstrated on two GaN technologies, with one showing a linearizability degradation issue. A clear difference is seen between the two technologies after their characterization.