KEYNOTE: InP DHBT ICs for Optical Communications: Past, Present, and Future

During the last two decades, the communication traffic has exploded due to the massive deployment of several applications (e.g. video on demand, cloud storage and computing, Artificial Intelligence and machine learning, etc.). Answering this huge demand increase has been essentially possible thanks to optical communication systems, which form the backbone of communication and information networks. In this context, high-speed electronics is a key enabler for high Baud rate optical transceivers, allowing fast and energy efficient conversion of the signal from the electrical to the optical domain. In this presentation, we shall discuss the specific role of indium phosphide (InP) heterojunction bipolar transistors (HBT), which combine high speed-performance with the ability to withstand large output swing. In particular, we shall show how InP HBT ICs have enabled speed record-breaking experiments, as well as discuss present state of the art in this domain and next challenges. Some IC examples particularly suitable to address one key challenge: how to increase the transceivers’ symbol-rate while reducing power consumption of the system, will be detailed. Presently, the hetero-integration of InP HBTs with silicon processes is intensively investigated to increase manufacturability of InP HBT. This talk will also discuss the possible technical solutions for such integration.