A 25dBm 95–115GHz Coupler-Based Traveling-Wave MMIC Power Amplifier in GaAs pHEMT Technology

This paper presents a 95–115GHz power amplifier (PA) based on a coupler-enabled traveling-wave combiner/splitter network, implemented in a commercial 0.1µm GaAs pHEMT process. Directional couplers provide high inter-branch isolation, suppressing mutual load interactions between the combined unit amplifiers. The PA achieves a saturated output power of 24.5dBm (±0.7 dB) across a 20GHz bandwidth, representing one of the highest reported power levels for GaAs PAs beyond 100 GHz. These results demonstrate the effectiveness of the coupler-based traveling-wave architecture for wideband, high-power W-band MMIC design.