0.5-to-52GHz High Power Nonuniform Distributed Amplifier in 60nm GaN/Si Process

This paper presents the design of a nonuniform distributed power amplifier in 60 nm gallium nitride on silicon substrate, operating over a frequency range of 0.5 to 52 GHz. To achieve high output power over a wide bandwidth, the output drain line is tapered and a double-stacked HEMT is used. This MMIC delivers 29–33 dBm of output power, with 29.5 dBm at 50 GHz. The average small-signal gain is 11.5 dB, with input and output return losses of less than -8 dB. The MMIC has an area of 1.4 × 2.7 mm².