GaN Power Bars for Microwave Power: Modeling and Validation

Today, GaN power bars are the most common solution for achieving state-of-the-art output power and efficiency up to the C-band. Leading foundries worldwide continue to release new power bars, steadily pushing performance higher. One of the main barriers to adoption of these devices is the lack of accurate models. In this paper, we review key weaknesses in existing formulations and introduce an approach that correctly captures charge-trapping and self-heating in high-power GaN devices. We provide extensive experimental validation of the proposed modelling technique.