Challenges and opportunities of GaN-on--Si from a foundry perspective

Introduction of an advanced high volume 200mm GaN-on-Silicon technology for RF Cellular Infrastructure Power Amplifier applications. Review of the challenges and opportunities of bringing a GaN-on-Si compoundb semiconductor technology into an advanced 200mm CMOS fab for foundry offering. End to end discussion to bring advanced 200mm GaN-on-Silicon technology to market, including: ensuring proper material handling and controls to run gallium materials along side silicon wafers; taking advantage of advanced tool capabilities to improve device stability and variability; to the challenges of testing and  developing device and circuit simulation models for GAN-ON-SI HEMT devices; and even safely shipping final wafers.