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Challenges and Opportunities of GaN-on-Si from a Foundry Perspective
Introduction of an advanced high volume 200mm GaN-on-Silicon technology for RF Cellular Infrastructure Power Amplifier applications. Review of the challenges and opportunities of bringing a GaN-on-Si compound semiconductor technology into an advanced 200mm CMOS fab for foundry offering. End-to-end discussion to bring advanced 200mm GaN-on-Silicon technology to market, including: ensuring proper material handling and controls to run gallium materials along side silicon wafers; taking advantage of advanced tool capabilities to improve device stability and variability; to the challenges of testing and developing device and circuit simulation models for GaN-on-Si HEMT devices; and even safely shipping final wafers.