A 450W GaN-Based Limiter for S-Band Applications

This paper describes the design and characterization of a compact robust two-stage MMIC GaN Power Limiter using Cold FETs and Schottky Diodes. The limiter design is based on 0.15-µm GaN technology and can handle up to 450 W pulsed input power over the 2.6–3.6 GHz frequency band associated to a recovery time lower than 200 ns and a very low small signal insertion loss of 0.6 dB. To the authors knowledge, this is the highest power handling capability ever achieved on MMIC GaN based limiters.