GaN-Si-Based RF Switch to Improve SWaP and Reduce Complexity Out of High-Power Radio Design

High-power radio design has utilized PIN diode technology to realize RF switch functions in RF front-ends. 5G base station, Tactical/Mil Comm Radios are required to cover many bands. The majority of 5G base station Remote Radio Head (RRH) and Modern Radar architectures are based on phased array where many RFFEs need to be implemented in tight board space. It is unfeasible to realize multiple bands and multiple RFFEs spread over wide frequency range with traditional PIN diode switch technology. In this presentation we will show how GaN based RF switches are solving many challenges presented by modern high-power radios.