INDUSTRY KEYNOTE: InP HBT Technologies for Next Generation mmWave and THz Systems

We will review the operating characteristics and performance of advanced 250nm and 130nm InP HBT IC technologies with an emphasis on transistor and unit-cell design for mmWave and sub-THz PAs. InP HBT performance is strongly influenced by non-equilibrium (ballistic) transport effects in the collector and the modeling and impact of these effects on circuit operation will be discussed. Further improving the efficiency of InP ICs through advances in transistor design and back-end-of-line technology will be discussed and techniques for the heterogeneous integration of InP with Silicon electronics for phased-array applications will be reviewed.