An Improved Extraction Method for the Trapping Time Constants in GaN HEMTs
With Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) being the preferred solution for radio frequency (RF) power applications, there is a growing need to have accurate models that encompass their trapping effects. For that, it is necessary to know the charge capture and emission time constants. As IDS has a nonlinear dependency on the trapping state, this paper proposes to use the static dependency with quiescent VDS (VDQ) to access the equivalent trapping state and, from there, extract the time constants. The proposed method was applied to a 2×200 µm GaN HEMT and the impact of extracting the time constants directly from IDS is shown.