A Ku-Band Internally Matched 50W GaN HEMT Power Amplifier Using Advanced Cu-Mo-Cu Heat Sink

In this study, we present an internally matched 50W GaN HEMT package designed for Ku-band frequencies, featuring an advanced heat sink structure for optimal thermal management and consistent broadband performance. Utilizing the Cree CGHV1J070D model, the power amplifier package incorporates a Cu-Mo-Cu cladding material for the heat sink base, chosen for its superior thermal characteristics. By elevating the heat sink layer, we have shortened the length of the bond wire connections. This structural modification mitigates the sensitivity to matching due to the inductance induced by bond wires, subsequently lowering the matching Q-factor within the network. Experimental results demonstrate the proposed IMFET package delivers RF performance in the 12.4GHz to 13.8GHz frequency band, with an output power exceeding 47 dBm and a drain efficiency of 31.3% over a bandwidth of 10.6%.