A 0.9 to 4.0GHz High Efficiency Reactively-Matched GaN Power Amplifier MMIC

This paper reports on a design and measurement of a 0.9 to 4.0 GHz Gallium Nitride (GaN) power amplifier monolithic microwave integrated circuit (MMIC). High efficiency and high output power amplifier over a wide bandwidth are achieved by using a compact reactively-matched power amplifier configuration. Measurement results of the power amplifier show output power of 30.4 to 53.1 W, power added efficiency (PAE) of 37.5 to 67.0% over 0.9 to 4.0 GHz using a 30 V drain voltage with a chip size of 19.44 mm² under continuous wave condition. These results represent higher efficiency and output power in a compact size compared to the other reported amplifiers with similar bias conditions.