Measurement accuracy improvement in on-wafer measurement by RF signal detection technique

AIST has been developing high-precision on-wafer measurement technologies. RF probe position of the three axes (X-,Y-, and Z-axes) and its planarization are controlled with an accuracy that exceeds the resolution of a microscope (less than 2 µm, and 0.03°) by analyzing actually measured S-parameter. These techniques have been verified in the frequency range up to 1.1 THz. We will report on the latest research on this technique, as well as innovative terahertz material characterization techniques and characterization of semiconductor chips includes Si-CMOS technology.