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On-wafer characterization of Sub-THz InP HBTs: Importance of choosing the proper error correction algorithm
For down-scaled Sub-THz transistors determination of Mason’s gain is associated with various challenges, which compromises the reliability of the extracted values for the maximum frequency of oscillation. It is observed that the on-wafer parasitic effects, especially probe-to-probe coupling has a significant influence on the extracted transistor properties, whereas the influence of the neighboring structures and other wafer-related phenomena remains negligible. In this talk, different error correction techniques implemented to mitigate such unwanted effects will be discussed and the potential of on-wafer calibration for the characterization of sub-THz transistors will be presented, using Indium-Phosphide (InP) Hetero-junction Bipolar Transistors (HBTs).