Thin-Film Diamond Integration for Advanced Thermal Management in Electronics

Gallium Nitride (GaN) HEMT technology is pivotal for power and RF applications but suffers from significant Joule heating, affecting performance and reliability. We have developed a low-temperature (~400 ?) process to integrate thin-film diamond onto GaN, achieving thermal boundary resistance (TBR) as low as 1.89 m²K/GW through innovative interlayer engineering. This integration enables diamond films with high thermal conductivity (300-600 W/m/K) and 97% phase purity, reducing GaN HEMT channel temperatures by over 100 ? at 20 W/mm. By incorporating SiC interlayers and optimizing phonon transport, our approach significantly enhances heat dissipation, improving device performance, durability, and thermal management in electronics.