Ku/K-Band Low Power Dual-Channel LNAs With Less Than 1.4dB NF for SATCOM Phased Array Applications
This paper presents the design and implementation
of dual channel Ku and K band LNAs for SATCOM applications.
The IC for each band consists of two identical LNAs with a
shared reference current and separate supplu voltages as well
as RF inputs and outputs. Chips are packaged using a flipchip-
chip-scale-package (FCCSP) technology and placed on PCBs
for connectorized characterization. The Ku-Band LNA achieves
a minimum noise figure (NF) of 1.3dB and a peak gain of
25dB with a power consumption of 11mW. The K-Band LNA
achieves a minimum noise figure of 1.4dB and a peak gain of
22dB while consuming 15mW. To the best of authors’ knowledge,
these results demonstrate the state-of-the-art performance in any
silicon process.