Switchable and Tunable Ferroelectric Devices for Adaptive and Reconfigurable RF Circuits (TBC)

Recent advances of molecular beam epitaxy have made it possible for the growth of ferroelectric nitrides down to nanometer and atomic scales and for the realization of multilayer ferroelectric heterostructures with atomically sharp interface and precisely controlled thickness, stoichiometry, and potentially domain size. The ability to control the polarity switching in ScAlN/AlN multilayers presents a critical advance for next-generation electronic and piezoelectric devices. Controlled ferroelectric switching in multilayer AlN/ScAlN/AlN structures grown by molecular beam epitaxy has provided the capability to demonstrate switchable multimode bulk acoustic resonators up to mm-wave frequencies. Recent results for such devices will be presented.