An FMCW-Modulated-Oscillator-Based Wide-Band Terahertz Detector in 16nm FinFET

This paper presents an on-chip wide-band terahertz (THz) power detector based on a modulated fundamental Clapp oscillator implemented in a 16nm FinFET technology. The detector takes advantage of the high-gain region of the oscillator and an frequency-modulated continuous wave (FMCW) bias to detect THz signal at continuous bands around the fundamental frequency. The oscillation swing proportional to the input THz signal power is rectified for readout using an envelope detector. The detectors achieve a maximum responsivity of 1.24MV/W, a minimum NEP of 578 fW/√Hz, and a continuous detection bandwidth of 6 GHz at 250 GHz with a baseband FMCW modulation bandwidth of 3 GHz.