27-GHz Silicon-Integrated Rectenna Based on Novel Multilayer Substrate

This paper presents the design, fabrication, and characterization of a multi-layer 27 GHz rectenna integrated entirely on Silicon, aimed at achieving full CMOS compatibility for energy harvesting applications. The device is fabricated on a High-Resistivity Silicon (HRSi) substrate, which is selectively etched to create a low-permittivity region for the antenna while maintaining a high-permittivity full substrate for the rectifier circuit. The rectenna, operating in the millimeter-wave (mmWave) band, features a compact single-cell design with dimensions of 13 x 13 mm² only, making it suitable for integrating IoT devices to support energy autonomy. The rectenna utilizes a GaAs diode rectifier and achieves a maximum RF-to-DC power conversion efficiency (PCE) of about % at 12 dBm input power. This work demonstrates the potential of HRSi-based, silicon-integrated rectennas for efficient energy harvesting in IoT applications.