300-GHz-Band Single-Balanced Resistive Mixer Module in 60-nm InP HEMT Technology with LO Leakage Suppressing Function

This paper presents a wideband 300-GHz mixer module with a local oscillator (LO) leakage suppression function. We employ a single-balanced resistive mixer topology and optimize impedance matching networks (MNs) with IF/RF isolation functions to achieve high conversion gain (CG), wide bandwidth, high linearity, and low LO leakage. The mixer IC is fabricated using 60-nm InP HEMT technology and incorporated in a mixer module with WR3.4 waveguide interfaces. The fabricated module has a CG of −15 dB, a −6 dB bandwidth of 83 GHz ranging from 225 GHz to 308 GHz, and a maximum LO leakage suppression of 37 dB.