KEYNOTE: Advancements in RF High Power Supply Chain and Ecosystem Enabling Transition from Vacuum Electron Devices to Multi-kW RF Solid-State Solutions and Systems

With the advent of multi-kW GaN on SiC transistors, operating at 100-150V, designed for megawatt systems to replace Vacuum Electron Devices where it is advantageous, the need arises to ensure that a complete Supply Chain and Ecosystem of peripheral active and passive devices and components are also available to enable this high-power technology transition. This presentation will discuss the need and available solutions for all these peripheral (but still critical) components and devices such as high voltage thin-film and electrolytic capacitors, high voltage inductors, high voltage rated power splitter and combiners, digital control integrated circuits for monitoring parameters such as output power level, temperature, pulse conditions, etc. A case study on a digital pallet featuring DC-DC converters for sourcing DC power from existing 28V and 48V power supplies and converting it to 100–150V for the new 100–150V RF GaN HEMT power transistors is also discussed.