KEYNOTE: Future State of GaN MMIC Technology for Defense Electronics

This presentation describes our efforts to leverage recent advances in GaN HEMT technology to meet the demands of next-gen defense electronic systems. Systems increasingly require higher operating frequency, wider instantaneous bandwidth, and higher output power all within heavily size, weight, and power (SWaP) constrained payloads. Improvements to intrinsic HEMT gain and efficiency are critical to meet today’s system requirements and to maintain a technological advantage and dominance of the electromagnetic spectrum.