A Wideband TIA-Driver Unit in 22-nm CMOS FDSOI for IntegratedMicrowave Optoelectronic Oscillators

This paper presents the design and measurement results of a cascaded transimpedance amplifier (TIA)-driver unit in 22-nm CMOS FDSOI technology as part of a potential integrated microwave optoelectronic oscillator (OEO). The TIA utilizes three-cascaded stages of inverter-based units to increase gain via composite transistors and reduce power supply via current reusing while the driver is based on a 3-stacked amplifier stage with resistive feedback to increase the output swing and maintaining the amplifier stability. Measurement results show the TIA-driver achieves a voltage gain of 35-39 dB, and a group delay of 50-100 ps over the 2-13 GHz bandwidth. Output voltage swing is ∼ 1.5 V for an input TIA current of 300 uA, suitable to drive a silicon photonic Mach-Zehnder modulator (MZM) as part of an integrated microwave OEO. The chip occupies an area of 0.918 mm2 and consumes 225 mW using a 0.8 V and 2.5 V supply voltage.