H-Band Differential Cascode Power Amplifier Achieving 9.5-dBm OP1dB at 260 GHz in 250-nm InP DHBT Process
We present a 260-GHz differential cascode power
amplifier in 250-nm InP DHBT process. For the on-wafer
measurement or waveguide packaging, on-chip baluns or dipole
waveguide transitions were monolithically integrated. From the
on-wafer measurement, the peak small signal gain (S21) and 3-dB
bandwidth were 19.5 dB at 260 GHz and 25 GHz in the range of
254.2 – 279.2 GHz, respectively. The maximum output power,
OP1dB and PAEmax were 10.2 dBm, 9.5 dBm and 3.1%,
respectively, at 260 GHz.