A Low-Loss, Wideband, 0–110GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers

A single-pole, double-throw (SPDT) switch circuit using phase-change material (PCM) RF switches was fabricated, bumped, and mounted to an evaluation board before being tested across two frequency ranges (0–67 GHz and 0–110 GHz). The PCM RF switches were actuated using integrated CMOS drivers available in the base process, which is a combination of a traditional RFSOI CMOS process with the monolithic integration of PCM RF switches. Using a thru to de-embed evaluation board losses, the SPDT measured less than 1.0 dB of insertion loss with more than 35 dB of isolation from 0–67 GHz, and less than 2.5 dB of insertion loss with more than 20 dB of isolation from 0–110 GHz (which includes the bump transition losses). The SPDT also had a measured power handling of 29 dBm and IP2/IP3 of 132/63 dBm, respectively, which is approximately 20 dB higher than comparable RFSOI CMOS switches. The PCM RF switches are functional down to DC, making it a true wideband DC-110+ GHz switch technology.