KEYNOTE: InP HBT Technologies for Integrated Circuit Development of Efficient mm-Wave and THz Power Amplifiers and Sources

InP heterojunction bipolar transistor (HBT) technologies have significant power gain at frequencies greater than 100-GHz. Power amplifiers and integrated circuits have been demonstrated with state-of-the-art performance at mm-Wave, D- and G-Band, and THz operation, showing a significant performance advantage compared to SiGe HBT, Si-CMOS, and GaN HEMT ICs at these frequencies. This talk will review current results and new IC development from the 250-nm and 130-nm scaling nodes — examples include a compact 220-GHz PA with 60-mW output power and 25% power-added-efficiency (PAE), and an eight-way on-chip combined ~ 0.5-W 90–140 GHz InP HBT PA chip that has been packaged. Additionally, this talk will review how the InP HBT technology has been used to improve the performance of high frequency test and measurement equipment, as well as mm-wave and THz sources.