300 GHz 8×1 Active Phased Array MMIC with On-Chip Power Amplifiers, Vector Modulators, and Antennas

This paper reports on an eight-channel active phased array monolithic microwave integrated circuit (MMIC) which includes on-chip vector modulators, power amplifiers, and antennas, all operating around the 300 GHz frequency range. They are manufactured on a 35nm InGaAs metamorphic high-electron-mobility transistor technology. The on-wafer measurement results are presented, which reveal a gain of above 20 dB from 260 GHz to 320 GHz for each channel of the MMIC. A peak output-power-per-channel of 6dBm is measured. Regarding the phase shifting/compensation, a four-bit resolution is achieved and demonstrated from 290GHz to 320 GHz. Considering the integration complexity of the chip, the achieved bit resolution in tandem with the operating bandwidth and degree of amplification, the demonstrated MMIC represents a first-time realization for III-V semiconductor-based technologies.