An 8-12.2GHz CMOS Low-Noise Amplifier with Partially Tail-Coupled Transformer and Large-Transistor Achieving 1.8 dB Average NF

This paper presents an 8–12.2 GHz low-noise amplifier (LNA) featuring a partially tail-coupled transformer and a large-transistor design to enhance noise and gain performance. The proposed partially tail-coupled transformer and large-transistor technique provides wideband input matching and a low noise figure (NF) without requiring a gate-series inductor, simplifying the design and minimizing noise degradation. To validate the design, a two-stage LNA was implemented using 65-nm bulk complementary metal-oxide-semiconductor (CMOS) technology. Measurements show a peak gain of 28.5 dB and an average gain of 27.1 dB, along with a 3-dB bandwidth of 8–12.2 GHz, and a minimum NF of 1.61 dB with an average NF of 1.8 dB across the band. The LNA achieves an IP1dB of ‒28.2 dBm, IIP3 of ‒19 dBm at 12 GHz, dissipates 22 mW from a 1 V supply, and occupies a compact core area of 0.187 mm².