Determination of the thermal noise parameters of FDSOI MOSFET through hybrid noise matrix

A powerful formalism for determining thermal noise parameters, referred to as the NFYs method, is described for MOSFET transistors. This method leverages hybrid two-port network theory and common assumptions about the transistor's noise sources. It requires only the measurement of the noise figure at a single source admittance and the S-parameters, eliminating the need for equivalent circuit theory or the traditional and complex multi-impedance setup. After detailing the mathematical development of the method, its results are compared to those of two previous methods to demonstrate its efficiency and validity.