Scaling silicon-based quantum computing using 22 nm FDSOI

Quantum computers are nearing the thousand qubit mark, with the current focus on scaling to deliver computational performance beyond classical computers. But as quantum processors grow in complexity, new challenges arise such as the management of device variability and the interface with supporting electronics to build an integrated quantum computing system. Spin qubits in silicon quantum dots aim to tackle this challenge by utilising their proven high control and readout fidelities. Furthermore, silicon spin qubits can be in principle manufactured using the large-scale integration capabilities of the semiconductor industry facilitating the integration with cryogenic electronics. Here, we present results towards the implementation of electron spin qubits on an industry-standard process: 22 nm FDSOI. We leverage the process by integrating quantum dots embedded in transistor structures and a high-frequency multiplexer that enables rapid access to up to 1024 devices, all operating below 1 K. We perform rapid radio-frequency reflectometry measurements and parameter extraction to determine the best dimensions for qubit operation. We then perform first electron spin readout measurements based on spin-dependent tunneling and fast charge sensing via a radio-frequency single electron transistor (rfSET). Finally, we demonstrate how the tank circuit of the rfSET can be integrated on chip with a size commensurate to the qubit structure. Overall, our results demonstrate substantial promise of 22 nm FDSOI as a platform for quantum computing.