Broadband, Efficient mm-Wave and THz Power Amplifiers Using Advanced InP HBT Technologies

InP heterojunction bipolar transistor (HBT) technologies have significant power gain at frequencies greater than 100GHz. Power amplifiers and integrated circuits have been demonstrated with state-of-the-art performance, high operational bandwidth, and high efficiency at mm-wave, D- and G-Band, and THz operation. This talk will review current results and new IC development from the 250nm and 130nm scaling nodes and the novel PA cell topologies they employ — examples include a compact 220GHz PA with 60mW output power and 28% power-added-efficiency (PAE), and a packaged eight-way on-chip combined PA with ∼0.5W output power covering the entire 90–140GHz WR08 rectangular waveguide band. Additionally, the talk will review how the InP HBT technology has been used to improve the performance of high frequency test and measurement equipment, as well as mm-wave and THz sources.