Ultra-Low-Noise VCOs and High-Performance Multipliers for E- and D-Band Frequency Generation

This talk presents recent advances in silicon-integrated frequency sources that push the limits of mm-wave and sub-THz signal generation. The Voltage Controlled Oscillator exploits series resonance, achieving unprecedented phase-noise reduction without requiring aggressive inductor scaling. Implemented at 10GHz in 55nm BiCMOS, test chips prove the lowest phase noise ever reported for fully integrated silicon oscillators, while keeping state-of-the-art tuning range and power efficiency. To further extend frequency generation into the E- and D-bands, high-performance frequency multipliers are introduced. First, an E-band sextupler is presented, based on a tripler core that emulates a cubic trans-characteristic to produce a clean third harmonic, followed by a push-push doubler. Measurements show superior harmonic suppression across a wide bandwidth as well as improved efficiency. Next, a Gilbert-cell-based frequency multiplier is described, which uses reduced duty-cycle excitation to achieve high conversion gain, 40dB fundamental rejection, and robust performance from 110 to 170GHz. Together, these results demonstrate a unified strategy for combining ultra-low-noise oscillators with highly efficient multipliers, significantly extending silicon-based frequency synthesis into the E- and D-bands and pushing the next generation of high-performance communication, radar, and sensing systems.