3DHI Platforms Leveraging GaN Dielets, Si CMOS and Glass

3D heterogeneous integration (3DHI) is critical for the future of mm-wave and RF systems. The ability to integrate various technology nodes into a single package allows for added functionality and improved performance. III-V’s, such as Gallium Nitride (GaN), provide high output power and high frequencies with excellent linearity. But, conventional III-V Monolithic Microwave Integrated Circuits (MMIC) suffer from large circuit area, lack of digital circuitry and high cost. This presentation details our efforts to revolutionize the MMIC into the heterogeneous age with 3DHI platforms based on single transistor, GaN dielets that provide the best balance of performance, cost, functionality and scale. Several 5G power amplifiers based on our integrated circuit on glass (ICoG) and the GaN/Si CMOS 3D mm-wave integrated circuit (3D-mmWIC) platforms will be discussed. The talk will cover the co-optimization of device, circuit and package level innovations being made through these platforms.