Design of SiGe Front-End ICs for Heterogeneous Integration with III-V Technologies for Emerging D-Band and J-Band Applications

Sensor applications are emerging in the mm-wave up to sub-THz frequencies, especially in the D- and J-bands, where the challenging system requirements can be met by heterogeneous integration of different semiconductor technologies. This talk presents the development of front-end ICs in advanced SiGe BiCMOS technologies for heterogeneous integration with III-V chiplets. The first part of the talk provides insights into a D-band SiGe BiCMOS transmitter chip design integrating an InP PA chiplet, enabling higher power efficiency. The second part of the talk focuses on the design of a J-band transceiver chiplet in SiGe BiCMOS combining InGaAs LNA and PA chiplets on a Si-based interposer technology to address future sensing systems.