A 2.4-GHz MEMS-based Oscillator with Phase Noise of -138 dBc/Hz at 100 kHz Offset and 226 dBc/Hz FoM

A 2.4-GHz MEMS-based oscillator is presented with gm-boosting technique. A novel Darlington cell with a dynamic self-body-biasing scheme is proposed to boost the transconductance and to shorten the start-up time without introducing additional parasitics to the resonant tank. The proposed oscillator is fabricated in a 180-nm CMOS process. Measurement result shows that the oscillator achieves a phase noise of -138.23 dBc/Hz at 100 kHz offset and a figure-of-merit (FoM) of 226. The DC power consumption is 0.98-mW from a 0.7-V supply voltage. The total chip area is 0.65 × 0.57 mm2 including the pads.