Recent Progress in GaN MMICs for Wideband Applications in G-Band

This talk presents recent advances for the generation of mm-wave power using scaled Gallium Nitride HEMT MMICs for 110–170GHz and 140–220GHz in G-band, with gate lengths of 70nm and below. The progress in 6G mobile research and the power- and linear-efficiency requirements are driving the advancement of scaled GaN MMICs for power and multi-function applications, which are suitable to exceed the performance achieved by advanced InP DHBT and SiGe HBT ICs for these bands. Recent developments show that the significant power density advantage of GaN over other technologies can be maintained to 170GHz and above.